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Issue 5, 2020
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Tunneling-based rectification and photoresponsivity in black phosphorus/hexagonal boron nitride/rhenium diselenide van der Waals heterojunction diode

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Abstract

Tunneling-based van der Waals (vdW) heterostructures composed of layered transition metal dichalcogenides (TMDs) are emerging as a unique compact system that provides new research avenues in electronics and optoelectronics. Here, we designed a black phosphorus (BP)/rhenium diselenide (ReSe2) and black phosphorus (BP)/hexagonal boron nitride (h-BN)/rhenium diselenide (ReSe2) vdW heterojunction-based diode and studied the tunneling-based different phenomena, such as rectification, negative differential resistance (NDR) and backward rectification. Further, we measured a gate-tunable and tunneling-based rectifying current in BP/ReSe2 and BP/h-BN/ReSe2 heterojunction diodes, and achieved the highest tunneling-based rectification ratio of up to (RR ≈ 3.4 × 107). The high rectifying current is explained using the Simmons-based approximation through direct tunneling (DT) and Fowler–Nordheim tunneling (FNT) in low and high bias regimes. Furthermore, we extracted the photoresponsivity (R ≈ 12 mA W−1) and external quantum efficiency (EQE ≈ 2.79%) under an illuminated laser light source of wavelength 532 nm. Finally, we demonstrated the potential application of our heterostructure devices, such as a binary inverter, rectifier and switching operation at a high frequency. Our tunneling-based heterostructure device could operate at frequencies up to the GHz range. Therefore, our findings provide a new paragon to use the TMD-based vdW heterostructure in electronic and optoelectronic applications, such as multi-valued logic.

Graphical abstract: Tunneling-based rectification and photoresponsivity in black phosphorus/hexagonal boron nitride/rhenium diselenide van der Waals heterojunction diode

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Supplementary files

Article information


Submitted
16 Sep 2019
Accepted
31 Dec 2019
First published
02 Jan 2020

Nanoscale, 2020,12, 3455-3468
Article type
Paper

Tunneling-based rectification and photoresponsivity in black phosphorus/hexagonal boron nitride/rhenium diselenide van der Waals heterojunction diode

A. M. Afzal, Y. Javed, N. Akhtar Shad, M. Z. Iqbal, G. Dastgeer, M. Munir Sajid and S. Mumtaz, Nanoscale, 2020, 12, 3455
DOI: 10.1039/C9NR07971H

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