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Issue 35, 2019
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Room temperature ultrafast synthesis of N- and O-rich graphene films with an expanded interlayer distance for high volumetric capacitance supercapacitors

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Abstract

An electrochemical functionalization method is developed to fabricate N- and O-rich graphene films (F-RGO-60) with an expanded interlayer distance. In particular, the functionalization process could be completed within 60 seconds at room temperature, which is conducive to large-scale commercial applications. Electrochemical synthesis of F-RGO-60 leads to two synergetic effects simultaneously: (1) the expansion of the interlayer distance caused by a bubble effect, which leads to more exposure of the active surface area and (2) the introduction of N-doped sites and oxygen-containing functional groups, which not only improves the hydrophilicity of F-RGO-60 but also provides extra pseudocapacitance. It is worth mentioning that after electrochemical functionalization, F-RGO-60 can still maintain a high density of 1.47 g cm−3. Due to their optimal surface area, good electrolyte wettability and massive redox-active sites, the specific capacitance of F-RGO-60 films can reach up to 319.4 F cm−3 (217.3 F g−1) at 1 A g−1 in a three-electrode system, which is about 3.6 times larger than that of RGO films (60 F g−1). The integration of the low-cost preparation method and outstanding performance suggests that F-RGO-60 has great development prospects as supercapacitor electrode materials.

Graphical abstract: Room temperature ultrafast synthesis of N- and O-rich graphene films with an expanded interlayer distance for high volumetric capacitance supercapacitors

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Supplementary files

Article information


Submitted
15 Jul 2019
Accepted
16 Aug 2019
First published
17 Aug 2019

Nanoscale, 2019,11, 16515-16522
Article type
Paper

Room temperature ultrafast synthesis of N- and O-rich graphene films with an expanded interlayer distance for high volumetric capacitance supercapacitors

C. Huang, A. Hu, Y. Li, H. Zhou, Y. Xu, Y. Zhang, S. Zhou, Q. Tang, C. Chen and X. Chen, Nanoscale, 2019, 11, 16515
DOI: 10.1039/C9NR06001D

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