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Issue 35, 2019
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In situ growth of ultrasmall cesium lead bromine quantum dots in a mesoporous silica matrix and their application in flexible light-emitting diodes

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Abstract

Recently, CsPbX3 (X = Cl, Br, and I) perovskite quantum dots (QDs) have exhibited significant potential for application in the field of lighting. However, their self-absorption and agglomeration significantly decrease their photoluminescence when their solution is centrifuged to form a powder; this hinders their applications in the field of solid-state lighting. Currently, there is lack of efficient solutions to overcome the self-absorption issue for CsPbX3 QDs. Thus, herein, an effective strategy is proposed via the in situ growth of CsPbBr3 (CPB) QDs in a mesoporous silica (m-SiO2) matrix, where self-absorption originating from the agglomeration of the QD powder is distinctly suppressed in the m-SiO2 matrix. Furthermore, due to its higher transmissivity, some photons can transport along the channels of m-SiO2 with less light loss. As a result, the photoluminescence quantum yield (PLQY) of 68% for the CsPbBr3/m-SiO2 (CPB/MS) powder is distinctly higher than that of the discrete CPB powder (36%). In addition, the chemical stability, thermal quenching and luminous decay were evidently improved for the CPB/MS nanocomposite. Finally, a remote flexible light-emitting diode with ultrahigh stability and arbitrary bending angle was achieved, which presented a pathway for the application of CPB QDs in solid-state lighting.

Graphical abstract: In situ growth of ultrasmall cesium lead bromine quantum dots in a mesoporous silica matrix and their application in flexible light-emitting diodes

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Supplementary files

Article information


Submitted
07 Jul 2019
Accepted
11 Aug 2019
First published
20 Aug 2019

Nanoscale, 2019,11, 16499-16507
Article type
Paper

In situ growth of ultrasmall cesium lead bromine quantum dots in a mesoporous silica matrix and their application in flexible light-emitting diodes

P. Chen, Y. Liu, Z. Zhang, Y. Sun, J. Hou, G. Zhao, J. Zou, Y. Fang, J. Xu and N. Dai, Nanoscale, 2019, 11, 16499
DOI: 10.1039/C9NR05731E

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