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Issue 30, 2019
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Dual wavelength lasing of InGaN/GaN axial-heterostructure nanorod lasers

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Optical confinement effects are investigated in InGaN/GaN axial-heterostructure nanolasers. Cylindrical nanorods with GaN/InGaN/GaN structures are prepared using combined processes of top-down and bottom-up approaches. The lasing of InGaN is observed at a low threshold (1 μJ cm−2), which is attributed to an efficient carrier transfer process from GaN to InGaN. The lasing of GaN is also found in the threshold range of 10–20 μJ cm−2 with a superlinear increase in emission intensity and high quality factors (Q = 1000), implying that dual wavelengths of lasing are tunable as a function of excitation intensity. The non-classical Fabry–Pérot modes suggest strong light–matter interactions in nanorods by optical confinement effects. The polarization of lasing indicates that the non-classical modes are in the identical transverse mode, which supports the formation of exciton–polaritons in nanorods. Polariton lasing in a single axial-heterostructure nanorod is observed for the first time, which proposes small-sized light sources with low threshold, polarized light, and tunable wavelengths in a single nanorod.

Graphical abstract: Dual wavelength lasing of InGaN/GaN axial-heterostructure nanorod lasers

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The article was received on 08 May 2019, accepted on 16 Jun 2019 and first published on 17 Jun 2019

Article type: Paper
DOI: 10.1039/C9NR03906F
Nanoscale, 2019,11, 14186-14193

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    Dual wavelength lasing of InGaN/GaN axial-heterostructure nanorod lasers

    S. Y. Chun, G. Y. Yoo, S. Jeong, S. M. Park, Y. J. Eo, W. Kim, Y. R. Do and J. K. Song, Nanoscale, 2019, 11, 14186
    DOI: 10.1039/C9NR03906F

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