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Issue 20, 2019
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InSe: a two-dimensional semiconductor with superior flexibility

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Abstract

Two-dimensional indium selenide (InSe) has attracted extensive attention recently due to its record-high charge carrier mobility and photoresponsivity in the fields of electronics and optoelectronics. Nevertheless, the mechanical properties of this material in the ultra-thin regime have not been investigated yet. Here, we present our efforts to determine the Young's modulus of thin InSe (∼1–2 layers to ∼34 layers) flakes experimentally by using a buckling-based methodology. We find that the Young's modulus has a value of 23.1 ± 5.2 GPa, one of the lowest values reported to date for crystalline two-dimensional materials. This superior flexibility can be very attractive for different applications, such as strain engineering and flexible electronics.

Graphical abstract: InSe: a two-dimensional semiconductor with superior flexibility

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Publication details

The article was received on 12 Mar 2019, accepted on 27 Apr 2019 and first published on 29 Apr 2019


Article type: Communication
DOI: 10.1039/C9NR02172H
Nanoscale, 2019,11, 9845-9850
  • Open access: Creative Commons BY license
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    InSe: a two-dimensional semiconductor with superior flexibility

    Q. Zhao, R. Frisenda, T. Wang and A. Castellanos-Gomez, Nanoscale, 2019, 11, 9845
    DOI: 10.1039/C9NR02172H

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