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Issue 17, 2019
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The effect of strain on effective Duffing nonlinearity in the CVD-MoS2 resonator

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Abstract

We demonstrate all electrical measurements on NEMS devices fabricated using CVD grown monolayer MoS2. The as-grown monolayer film of MoS2 on top of the SiO2/Si wafer is processed to fabricate arrays and individual NEMS devices without the complex pick and transfer techniques associated with graphene. The electromechanical properties of the devices are on par with those fabricated using the exfoliation method. The frequency response of these devices is then used as a probe to estimate the linear thermal expansion coefficient of the material and evaluate the effect of strain on the effective Duffing nonlinearity in the devices.

Graphical abstract: The effect of strain on effective Duffing nonlinearity in the CVD-MoS2 resonator

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Supplementary files

Article information


Submitted
27 Dec 2018
Accepted
27 Mar 2019
First published
01 Apr 2019

Nanoscale, 2019,11, 8394-8401
Article type
Paper

The effect of strain on effective Duffing nonlinearity in the CVD-MoS2 resonator

C. Samanta, N. Arora, K. K. V., S. Raghavan and A. K. Naik, Nanoscale, 2019, 11, 8394
DOI: 10.1039/C8NR10452B

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