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Issue 7, 2019
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High photoresponsivity and broadband photodetection with a band-engineered WSe2/SnSe2 heterostructure

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Abstract

van der Waals (vdW) heterostructures formed by stacking different two-dimensional layered materials have been demonstrated as a promising platform for next-generation photonic and optoelectronic devices due to their tailorable band-engineering properties. Here, we report a high photoresponsivity and broadband photodetector based on a WSe2/SnSe2 heterostructure. By properly biasing the heterostructure, its band structure changes from near-broken band alignment to type-III band alignment which enables high photoresponsivity from visible to telecommunication wavelengths. The highest photoresponsivity and detectivity at 532 nm are ∼588 A W−1 and 4.4 × 1010 Jones and those at 1550 nm are ∼80 A W−1 and 1.4 × 1010 Jones, which are superior to those of the current state-of-the-art layered transition metal dichalcogenides based photodetectors under similar measurement conditions. Our work not only provides a new method for designing high-performance broadband photodetectors but also enables a deep understanding of the band engineering technology in the vdW heterostructures possible for other applications, such as modulators and lasers.

Graphical abstract: High photoresponsivity and broadband photodetection with a band-engineered WSe2/SnSe2 heterostructure

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Publication details

The article was received on 15 Nov 2018, accepted on 21 Jan 2019 and first published on 21 Jan 2019


Article type: Paper
DOI: 10.1039/C8NR09248F
Citation: Nanoscale, 2019,11, 3240-3247
  • Open access: Creative Commons BY-NC license
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    High photoresponsivity and broadband photodetection with a band-engineered WSe2/SnSe2 heterostructure

    H. Xue, Y. Dai, W. Kim, Y. Wang, X. Bai, M. Qi, K. Halonen, H. Lipsanen and Z. Sun, Nanoscale, 2019, 11, 3240
    DOI: 10.1039/C8NR09248F

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