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Issue 43, 2018
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Highly (00l)-oriented Bi2Te3/Te heterostructure thin films with enhanced power factor

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Introducing nanoscale heterostructure interfaces into material matrix is an effective strategy to optimize the thermoelectric performance by energy-dependent carrier filtering effect. In this study, highly (00l)-oriented Bi2Te3/Te heterostructure thin films have been fabricated on single-crystal MgO substrates using a facile magnetron co-sputtering method. Bi2Te3/Te heterostructure thin films with Te contents of 63.8 at% show an optimized thermoelectric performance, which possess a Seebeck coefficient of −157.7 μV K−1 and an electrical conductivity of 9.72 × 104 S m−1, leading to a high power factor approaching 25 μW cm−1 K−2. The partially decoupled behavior of the Seebeck coefficient and electrical conductivity is contributed to Bi2Te3/Te heterostructure interfaces, which causes interfacial barrier filtering and scattering effects; thus, a high level of the Seebeck coefficient is obtained. Meanwhile, carrier transport in ab plane can benefit from the highly preferred orientation, which guarantees a remarkably high electrical conductivity. We anticipate that our strategy may guide the way for preparing high-performance thermoelectric materials by microstructure design and regulation.

Graphical abstract: Highly (00l)-oriented Bi2Te3/Te heterostructure thin films with enhanced power factor

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Publication details

The article was received on 01 Sep 2018, accepted on 17 Oct 2018 and first published on 18 Oct 2018

Article type: Paper
DOI: 10.1039/C8NR07112H
Citation: Nanoscale, 2018,10, 20189-20195

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    Highly (00l)-oriented Bi2Te3/Te heterostructure thin films with enhanced power factor

    H. Shang, F. Ding, Y. Deng, H. Zhang, Z. Dong, W. Xu, D. Huang, H. Gu and Z. Chen, Nanoscale, 2018, 10, 20189
    DOI: 10.1039/C8NR07112H

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