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Issue 39, 2018
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Ultra-high performance flexible piezopotential gated In1−xSnxSe phototransistor

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Flexible optoelectronic devices facilitated by the piezotronic effect have important applications in the near future in many different fields ranging from solid-state lighting to biomedicine. Two-dimensional materials possessing extraordinary mechanical strength and semiconducting properties are essential for realizing nanopiezotronics and piezo-phototronics. Here, we report the first demonstration of piezo-phototronic properties in In1−xSnxSe flexible devices by applying systematic mechanical strain under photoexcitation. Interestingly, we discover that the dark current and photocurrent are increased by five times under a bending strain of 2.7% with a maximum photoresponsivity of 1037 AW−1. In addition, the device can act as a strain sensor with a strain sensitivity up to 206. Based on these values, the device outperforms the same class of devices in two-dimensional materials. The underlying mechanism responsible for the discovered behavior can be interpreted in terms of piezoelectric potential gating, allowing the device to perform like a phototransistor. The strain-induced gate voltage assists in the efficient separation of photogenerated charge carriers and enhances the mobility of In1−xSnxSe, resulting in good performance on a freeform surface. Thus, our multifunctional device is useful for the development of a variety of advanced applications and will help meet the demand of emerging technologies.

Graphical abstract: Ultra-high performance flexible piezopotential gated In1−xSnxSe phototransistor

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The article was received on 28 Jun 2018, accepted on 13 Sep 2018 and first published on 14 Sep 2018

Article type: Paper
DOI: 10.1039/C8NR05234D
Nanoscale, 2018,10, 18642-18650

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    Ultra-high performance flexible piezopotential gated In1−xSnxSe phototransistor

    C. R. Paul Inbaraj, R. J. Mathew, G. Haider, T. Chen, R. K. Ulaganathan, R. Sankar, K. P. Bera, Y. Liao, M. Kataria, H. Lin, F. C. Chou, Y. Chen, C. Lee and Y. Chen, Nanoscale, 2018, 10, 18642
    DOI: 10.1039/C8NR05234D

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