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Issue 47, 2018
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Significantly enhanced magnetoresistance in monolayer WTe2via heterojunction engineering: a first-principles study

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Abstract

The large non-saturating magnetoresistance (MR) of bulk WTe2 is known to be greatly reduced in thin films with decreasing thickness. In this study, based on first-principles calculations, we demonstrate that 2D WTe2 bonded to graphene, through a WTe2/graphene van der Waals (vdW) heterojunction, can exhibit a significantly enhanced MR, which can be even larger than that of bulk WTe2. Moreover, the MR shows a strong stacking-orientation-dependent behavior, which facilitates a tunable MR effect. Our findings illustrate a new route to enhancing the MR of WTe2 and other 2D semimetals via heterojunction engineering, which is useful for a range of applications in information technology.

Graphical abstract: Significantly enhanced magnetoresistance in monolayer WTe2via heterojunction engineering: a first-principles study

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Supplementary files

Article information


Submitted
30 May 2018
Accepted
02 Nov 2018
First published
02 Nov 2018

Nanoscale, 2018,10, 22231-22236
Article type
Paper
Author version available

Significantly enhanced magnetoresistance in monolayer WTe2via heterojunction engineering: a first-principles study

L. Hu, L. Kang, J. Yang, B. Huang and F. Liu, Nanoscale, 2018, 10, 22231
DOI: 10.1039/C8NR04391D

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