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Issue 46, 2018
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A silicon nitride waveguide-integrated chemical vapor deposited graphene photodetector with 38 GHz bandwidth

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Abstract

We demonstrate a high-speed chemical vapor deposited graphene-on-silicon nitride waveguide photodetector. The device is designed with grating-like metal contact to reduce the channel spacing. Benefiting from the narrow channel spacing, a calculated transit-time-limited bandwidth of 111 GHz is derived. The resistance–capacitance-limited bandwidth is also improved due to the small relative permittivity of silicon nitride. At a wavelength of 1550 nm, we measured an electro-optic bandwidth of 38 GHz under zero bias and an intrinsic responsivity of 13 mA W−1 at 0.1 V reverse bias with a 6 μm detection length.

Graphical abstract: A silicon nitride waveguide-integrated chemical vapor deposited graphene photodetector with 38 GHz bandwidth

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Publication details

The article was received on 24 Apr 2018, accepted on 24 Oct 2018 and first published on 24 Oct 2018


Article type: Paper
DOI: 10.1039/C8NR03345E
Citation: Nanoscale, 2018,10, 21851-21856

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    A silicon nitride waveguide-integrated chemical vapor deposited graphene photodetector with 38 GHz bandwidth

    Y. Gao, H. K. Tsang and C. Shu, Nanoscale, 2018, 10, 21851
    DOI: 10.1039/C8NR03345E

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