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Issue 37, 2018
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Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation

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Abstract

Field-effect transistors (FETs) with non-covalently functionalised molybdenum disulfide (MoS2) channels grown by chemical vapour deposition (CVD) on SiO2 are reported. The dangling-bond-free surface of MoS2 was functionalised with a perylene bisimide derivative to allow for the deposition of Al2O3 dielectric. This allowed the fabrication of top-gated, fully encapsulated MoS2 FETs. Furthermore, by the definition of vertical contacts on MoS2, devices, in which the channel area was never exposed to polymers, were fabricated. The MoS2 FETs showed some of the highest mobilities for transistors fabricated on SiO2 with Al2O3 as the top-gate dielectric reported so far. Thus, gate-stack engineering using innovative chemistry is a promising approach for the fabrication of reliable electronic devices based on 2D materials.

Graphical abstract: Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation

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Publication details

The article was received on 14 Mar 2018, accepted on 06 Jun 2018 and first published on 18 Sep 2018


Article type: Communication
DOI: 10.1039/C8NR02134A
Nanoscale, 2018,10, 17557-17566
  • Open access: Creative Commons BY license
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    Optimized single-layer MoS2 field-effect transistors by non-covalent functionalisation

    H. Kim, W. Kim, M. O'Brien, N. McEvoy, C. Yim, M. Marcia, F. Hauke, A. Hirsch, G. Kim and G. S. Duesberg, Nanoscale, 2018, 10, 17557
    DOI: 10.1039/C8NR02134A

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