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Issue 39, 2018
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Self-assembled KCu7S4 nanowire monolayers for self-powered near-infrared photodetectors

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Abstract

Near infrared light (NIR) photodetectors based on one-dimensional semiconductor nanowires have generated considerable interest due to their practical application in versatile fields. We present a facile yet efficient approach to rationally integrating KCu7S4 semiconductor nanowires by the Langmuir–Blodgett (LB) technique. A self-powered near infrared (NIR) light photodetector is fabricated by transferring a close-packed KCu7S4 nanowire monolayer to the surface of a silicon wafer. The as-fabricated Si/KCu7S4 heterojunction with a close-packed and well-aligned nanowire array exhibits splendid photovoltaic performance when illuminated by NIR light, allowing the detection of NIR light without an exterior power supply. The photodetector exhibits a high sensitivity to NIR light (980 nm, 295.3 μW cm−2) with responsivity (R) 15 mA W−1 and detectivity (D*) 2.15 × 1012 cm Hz1/2 W−1. Significantly, the device shows the capability to work under high pulsed light irradiation up to 50 kHz with a high-speed response (response time τr 7.4 μs and recovery time τf 8.6 μs). This facilitates the fabrication of low-cost and high-speed photodetectors and integrated optoelectronic sensor circuitry.

Graphical abstract: Self-assembled KCu7S4 nanowire monolayers for self-powered near-infrared photodetectors

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Supplementary files

Article information


Submitted
23 Feb 2018
Accepted
01 Jun 2018
First published
04 Jun 2018

Nanoscale, 2018,10, 18502-18509
Article type
Paper

Self-assembled KCu7S4 nanowire monolayers for self-powered near-infrared photodetectors

Y. Wang, Y. Wu, W. Peng, Y. Song, B. Wang, C. Wu and Y. Lu, Nanoscale, 2018, 10, 18502
DOI: 10.1039/C8NR01553H

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