Jump to main content
Jump to site search
Access to RSC content Close the message box

Continue to access RSC content when you are not at your institution. Follow our step-by-step guide.


Issue 2, 2018
Previous Article Next Article

Photoluminescence nonuniformity from self-seeding nuclei in CVD-grown monolayer MoSe2

Author affiliations

Abstract

We present optical spectroscopy (photoluminescence and Raman spectrum) studies of monolayer transition metal dichalcogenide MoSe2, with spatial location, temperature and excitation power dependence. The investigated spectra show location-dependent behavior with an increase in photoluminescence and Raman intensity and a blue-shift in photoluminescence peak position in the inner region. The observed behaviors of a large shift in the photoluminescence peak position at the edge and biexciton emissions in the inner region confirm that the monolayer MoSe2 crystals grow from nucleation centers during the CVD process. Temperature activated energy and dependence of the peak position are attributed to residual oxygen during the growth. Investigating this information provides a basis for precisely controlling the synthesis of TMDCs and their application in advanced optoelectronics.

Graphical abstract: Photoluminescence nonuniformity from self-seeding nuclei in CVD-grown monolayer MoSe2

Back to tab navigation

Supplementary files

Article information


Submitted
20 Nov 2017
Accepted
06 Dec 2017
First published
06 Dec 2017

Nanoscale, 2018,10, 752-757
Article type
Paper

Photoluminescence nonuniformity from self-seeding nuclei in CVD-grown monolayer MoSe2

X. Tian, R. Wei, S. Liu, Y. Zhang and J. Qiu, Nanoscale, 2018, 10, 752
DOI: 10.1039/C7NR08662H

Social activity

Search articles by author

Spotlight

Advertisements