Issue 6, 2018

Substrate-orientation dependent epitaxial growth of highly ordered diamond nanosheet arrays by chemical vapor deposition

Abstract

Three-dimensional ordering of two-dimensional nanomaterials has long been a challenge. Simultaneously, diamond nanomaterials are difficult to synthesize due to the harsh synthesizing conditions required. Here, we report substrate-crystal-orientation dependent growth of diamond nanosheets (DNSs) by chemical vapor deposition, which generates different DNS arrays on different substrates. The DNSs are grown by the in-plane epitaxy of the diamond {111} planes. So the arrays are highly ordered and solely determined by the spatial orientation of the {111} planes in the diamond FCC structure. The DNSs grown on the {110}, {111}, {001}, and {113} oriented substrates show inclination angles ranging from 90 to 29.5°. The DNSs with larger inclination angles grow preferentially, forming parallelogram arrays with inclination angles of 90° on the {110} substrates and parallel-line arrays with inclination angles of 80° on the {113} substrates. The density, thickness, size, and morphology of the DNSs have been well controlled. The present understanding and materials are highly promising for many applications such as sensors, catalysis, photonics, thermal management, and electronics.

Graphical abstract: Substrate-orientation dependent epitaxial growth of highly ordered diamond nanosheet arrays by chemical vapor deposition

Supplementary files

Article information

Article type
Paper
Submitted
23 Sep 2017
Accepted
29 Dec 2017
First published
02 Jan 2018

Nanoscale, 2018,10, 2812-2819

Substrate-orientation dependent epitaxial growth of highly ordered diamond nanosheet arrays by chemical vapor deposition

S. Wang, X. Ji, Y. Ao and J. Yu, Nanoscale, 2018, 10, 2812 DOI: 10.1039/C7NR07100K

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