Issue 22, 2017
From the journal:

Nanoscale

Correction: Thermal dissociation of inter-layer excitons in MoS2/MoSe2 hetero-bilayers

Shinichiro Mouri,*ab   Wenjin Zhang,a   Daichi Kozawa,a   Yuhei Miyauchi,a   Goki Edacd  and  Kazunari Matsuda*a  

* Corresponding authors

a Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan
E-mail: iguchan@fc.ritsumei.ac.jp

b Department of Electrical and Electronic Engineering, Ritsumeikan University, Kusatsu, Japan

c Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore

d Graphene Research Centre, National University Singapore, 6 Science Drive 2, Singapore 117546, Singapore

Abstract

Correction for ‘Thermal dissociation of inter-layer excitons in MoS2/MoSe2 hetero-bilayers’ by Shinichiro Mouri et al., Nanoscale, 2017, DOI: 10.1039/c7nr01598d.

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Article information

DOI
https://doi.org/10.1039/C7NR90102J
Article type
Correction
Submitted
12 May 2017
Accepted
12 May 2017
First published
25 May 2017
This article is Open Access
Creative Commons BY license

Nanoscale, 2017,9, 7686-7686

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Correction: Thermal dissociation of inter-layer excitons in MoS2/MoSe2 hetero-bilayers

S. Mouri, W. Zhang, D. Kozawa, Y. Miyauchi, G. Eda and K. Matsuda, Nanoscale, 2017, 9, 7686 DOI: 10.1039/C7NR90102J

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