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Issue 43, 2017
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Strain engineering, efficient excitonic photoluminescence, and exciton funnelling in unmodified MoS2 nanosheets

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Abstract

We established locally varying strain fields in unmodified MoS2 nanosheets. The approach relies on dry release in place of multilayer MoS2 on textured Si substrates. By this process we demonstrated intense photoluminescence, a ∼70 meV decrease of the transition energy, and exciton funneling in ∼4 nm-thick MoS2 films.

Graphical abstract: Strain engineering, efficient excitonic photoluminescence, and exciton funnelling in unmodified MoS2 nanosheets

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Publication details

The article was received on 17 May 2017, accepted on 02 Oct 2017 and first published on 17 Oct 2017


Article type: Communication
DOI: 10.1039/C7NR03537C
Nanoscale, 2017,9, 16602-16606

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    Strain engineering, efficient excitonic photoluminescence, and exciton funnelling in unmodified MoS2 nanosheets

    V. S. Mangu, M. Zamiri, S. R. J. Brueck and F. Cavallo, Nanoscale, 2017, 9, 16602
    DOI: 10.1039/C7NR03537C

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