Issue 17, 2017

Oxidation suppression during hydrothermal phase reversion allows synthesis of monolayer semiconducting MoS2 in stable aqueous suspension

Abstract

This letter demonstrates a simple method to achieve high-yields of 1H semiconducting MoS2 monolayers in concentrated, colloidally-stable aqueous suspension. The method is based on oxidation suppression during the hydrothermal processing step used for metal-to-semiconductor phase reversion. Accompanying DFT calculations on elementary steps in the MoS2 wet oxidation reaction suggest that a two-site corrosion mechanism is responsible for the observed high reactivity and low stability of 1T metallic MoS2.

Graphical abstract: Oxidation suppression during hydrothermal phase reversion allows synthesis of monolayer semiconducting MoS2 in stable aqueous suspension

Supplementary files

Article information

Article type
Communication
Submitted
17 Feb 2017
Accepted
07 Apr 2017
First published
07 Apr 2017

Nanoscale, 2017,9, 5398-5403

Oxidation suppression during hydrothermal phase reversion allows synthesis of monolayer semiconducting MoS2 in stable aqueous suspension

Z. Wang, Y. Zhang, M. Liu, A. Peterson and R. H. Hurt, Nanoscale, 2017, 9, 5398 DOI: 10.1039/C7NR01193H

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