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Issue 4, 2017
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Broadband terahertz modulation in electrostatically-doped artificial trilayer graphene

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Abstract

We report a terahertz optical modulator consisting of randomly stacked trilayer graphene (TLG) deposited on an oxidized silicon substrate by means of THz-Time Domain Spectroscopy (THz-TDS). Here, the gate tuning of the Fermi level of the TLG provides the fundamental basis for the modulation of THz transmission. We measured a 15% change in the THz transmission of this device over a broad frequency range (0.6–1.6 THz). We also observed a strong absorption >80% in the time-domain signals and a frequency independence of the conductivity. Furthermore, unlike previous studies, we find that the underlying silicon substrate, which serves as a gate electrode for the graphene, also exhibits substantial modulation of the transmitted THz radiation under applied voltage biases.

Graphical abstract: Broadband terahertz modulation in electrostatically-doped artificial trilayer graphene

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Article information


Submitted
06 Sep 2016
Accepted
06 Jan 2017
First published
16 Jan 2017

Nanoscale, 2017,9, 1721-1726
Article type
Paper

Broadband terahertz modulation in electrostatically-doped artificial trilayer graphene

I. Chatzakis, Z. Li, A. V. Benderskii and S. B. Cronin, Nanoscale, 2017, 9, 1721
DOI: 10.1039/C6NR07054J

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