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Issue 46, 2016
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Graphene thermal flux transistor

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Abstract

Insufficient flexibility of existing approaches to controlling the thermal transport in atomic monolayers limits their capability for use in many applications. Here, we examine the means of electrode doping to control the thermal flux Q due to phonons propagating along the atomic monolayer. We found that the frequency of the electron-restricted phonon scattering strongly depends on the concentration nC. of the electric charge carriers, established by the electric potentials applied to local gates. As a result of the electrode doping, nC is increased, causing a sharp rise in both the electrical conductivity and Seebeck coefficient, while the thermal conductivity tumbles. Therefore, the effect of the thermal transistor improves the figure of merit of nanoelectronic circuits.

Graphical abstract: Graphene thermal flux transistor

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Publication details

The article was received on 13 Sep 2016, accepted on 25 Oct 2016 and first published on 26 Oct 2016


Article type: Paper
DOI: 10.1039/C6NR07246A
Nanoscale, 2016,8, 19314-19325

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    Graphene thermal flux transistor

    S. E. Shafranjuk, Nanoscale, 2016, 8, 19314
    DOI: 10.1039/C6NR07246A

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