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Issue 7, 2016
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Synthesis and characterization of large-area and continuous MoS2 atomic layers by RF magnetron sputtering

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Abstract

In this article, we report layer-controlled, continuous and large-area molydenum sulfide (MoS2) growth onto a SiO2/Si substrate by RF sputtering combined with sulfurization. A two-step process was employed to synthesize MoS2 films. In the first step, an atomically thin MoO3 film was deposited by RF magnetron sputtering at 300 °C. Subsequently, the as-sputtered MoO3 film was further subjected to post-annealing and sulfurization processes at 650 °C for 1 hour. It was observed that the number of layers of MoS2 can be controlled by adjusting the sputtering time. The fabricated MoS2 transistors exhibited high mobility values of ∼21 cm2 V−1 s−1 (bilayer) and ∼25 cm2 V−1 s−1 (trilayer), on/off ratios in the range of ∼107 (bilayer) and 104–105 (trilayer), respectively. We believe that our proposed paradigm can start a new method for the growth of MoS2 in future electronics and optoelectronics applications.

Graphical abstract: Synthesis and characterization of large-area and continuous MoS2 atomic layers by RF magnetron sputtering

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Publication details

The article was received on 19 Dec 2015, accepted on 06 Jan 2016 and first published on 08 Jan 2016


Article type: Paper
DOI: 10.1039/C5NR09032F
Nanoscale, 2016,8, 4340-4347

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    Synthesis and characterization of large-area and continuous MoS2 atomic layers by RF magnetron sputtering

    S. Hussain, M. A. Shehzad, D. Vikraman, M. F. Khan, J. Singh, D. Choi, Y. Seo, J. Eom, W. Lee and J. Jung, Nanoscale, 2016, 8, 4340
    DOI: 10.1039/C5NR09032F

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