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Issue 4, 2016
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Weak antilocalization and electron–electron interaction in coupled multiple-channel transport in a Bi2Se3 thin film

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Abstract

The electron transport properties of a topological insulator Bi2Se3 thin film are studied in Hall-bar geometry. The film with a thickness of 10 nm is grown by van der Waals epitaxy on fluorophlogopite mica and Hall-bar devices are fabricated from the as-grown film directly on the mica substrate. Weak antilocalization and electron–electron interaction effects are observed and analyzed at low temperatures. The phase-coherence length extracted from the measured weak antilocalization characteristics shows a strong power-law increase with decreasing temperature and the transport in the film is shown to occur via coupled multiple (topological surface and bulk states) channels. The conductivity of the film shows a logarithmical decrease with decreasing temperature and thus the electron–electron interaction plays a dominant role in quantum corrections to the conductivity of the film at low temperatures.

Graphical abstract: Weak antilocalization and electron–electron interaction in coupled multiple-channel transport in a Bi2Se3 thin film

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Publication details

The article was received on 20 Oct 2015, accepted on 14 Dec 2015 and first published on 16 Dec 2015


Article type: Communication
DOI: 10.1039/C5NR07296D
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Citation: Nanoscale, 2016,8, 1879-1885

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    Weak antilocalization and electron–electron interaction in coupled multiple-channel transport in a Bi2Se3 thin film

    Y. Jing, S. Huang, K. Zhang, J. Wu, Y. Guo, H. Peng, Z. Liu and H. Q. Xu, Nanoscale, 2016, 8, 1879
    DOI: 10.1039/C5NR07296D

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