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Issue 3, 2016

Epitaxial integration of a nanoscale BiFeO3 phase boundary with silicon

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Abstract

The successful integration of the strain-driven nanoscale phase boundary of BiFeO3 onto a silicon substrate is demonstrated with extraordinary ferroelectricity and ferromagnetism. The detailed strain history is delineated through a reciprocal space mapping technique. We have found that a distorted monoclinic phase forms prior to a tetragonal-like phase, a phenomenon which may correlates with the thermal strain induced during the growth process.

Graphical abstract: Epitaxial integration of a nanoscale BiFeO3 phase boundary with silicon

Article information


Submitted
11 Oct 2015
Accepted
09 Dec 2015
First published
10 Dec 2015

Nanoscale, 2016,8, 1322-1326
Article type
Communication

Epitaxial integration of a nanoscale BiFeO3 phase boundary with silicon

W. Liang, C. Peng, R. Huang, W. Kuo, Y. Huang, C. Adamo, Y. Chen, L. Chang, J. Juang, D. G. Schlom and Y. Chu, Nanoscale, 2016, 8, 1322 DOI: 10.1039/C5NR07033C

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