Issue 3, 2016
From the journal:

Nanoscale

Flexoelectric MEMS: towards an electromechanical strain diode†

U. K. Bhaskar,‡*a   N. Banerjee,‡b   A. Abdollahi,a   E. Solanas,d   G. Rijndersb  and  G. Catalan*ac  

* Corresponding authors

a ICN2 – Institut Catala de Nanociencia i Nanotecnologia, CSIC and The Barcelona Institute of Science and Technology (BIST), Campus UAB, 08193 Bellaterra, Barcelona, Spain
E-mail: gustau.catalan@icn.cat, umeshkbhaskar@gmail.com

b Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede, The Netherlands

c ICREA - Institucio Catalana de Recerca i Estudis Avançats, 08010 Barcelona, Spain

d Lyncée Tec SA, PSE-A, CH-1015 Lausanne, Switzerland

Abstract

Piezoelectricity and flexoelectricity are two independent but not incompatible forms of electromechanical response exhibited by nanoscale ferroelectrics. Here, we show that flexoelectricity can either enhance or suppress the piezoelectric response of the cantilever depending on the ferroelectric polarity and lead to a diode-like asymmetric (two-state) electromechanical response.

Graphical abstract: Flexoelectric MEMS: towards an electromechanical strain diode

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Article information

DOI
https://doi.org/10.1039/C5NR06514C
Article type
Communication
Submitted
21 Sep 2015
Accepted
01 Dec 2015
First published
02 Dec 2015

Nanoscale, 2016,8, 1293-1298

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Flexoelectric MEMS: towards an electromechanical strain diode

U. K. Bhaskar, N. Banerjee, A. Abdollahi, E. Solanas, G. Rijnders and G. Catalan, Nanoscale, 2016, 8, 1293 DOI: 10.1039/C5NR06514C

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