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Issue 41, 2015

A high performance triboelectric nanogenerator for self-powered non-volatile ferroelectric transistor memory

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Abstract

We demonstrate an integrated module of self-powered ferroelectric transistor memory based on the combination of a ferroelectric FET and a triboelectric nanogenerator (TENG). The novel TENG was made of a self-assembled polystyrene nanosphere array and a poly(vinylidene fluoride) porous film. Owing to this unique structure, it exhibits an outstanding performance with an output voltage as high as 220 V per cycle. Meanwhile, the arch-shaped TENG is shown to be able to pole a bulk ferroelectric 0.65Pb(Mg1/3Nb2/3)O3–0.35PbTiO3 (PMN-PT) single crystal directly. Based on this effect, a bottom gate ferroelectric FET was fabricated using pentacene as the channel material and a PMN-PT single crystal as the gate insulator. Systematic tests illustrate that the ON/OFF current ratio of this transistor memory element is approximately 103. More importantly, we demonstrate the feasibility to switch the polarization state of this FET gate insulator, namely the stored information, by finger tapping the TENG with a designed circuit. These results may open up a novel application of TENGs in the field of self-powered memory systems.

Graphical abstract: A high performance triboelectric nanogenerator for self-powered non-volatile ferroelectric transistor memory

Supplementary files

Article information


Submitted
30 Jul 2015
Accepted
21 Aug 2015
First published
27 Aug 2015

Nanoscale, 2015,7, 17306-17311
Article type
Paper
Author version available

A high performance triboelectric nanogenerator for self-powered non-volatile ferroelectric transistor memory

H. Fang, Q. Li, W. He, J. Li, Q. Xue, C. Xu, L. Zhang, T. Ren, G. Dong, H. L. W. Chan, J. Dai and Q. Yan, Nanoscale, 2015, 7, 17306 DOI: 10.1039/C5NR05098G

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