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Issue 45, 2015
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Quantum spin hall insulators in strain-modified arsenene

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By means of density functional theory (DFT) computations, we predict that the suitable strain modulation of honeycomb arsenene results in a unique two-dimensional (2D) topological insulator (TI) with a sizable bulk gap (up to 696 meV), which could be characterized and utilized at room temperature. Without considering any spin–orbit coupling, the band inversion occurs around the Gamma (G) point at tensile strains larger than 11.7%, which indicates the quantum spin Hall effect in arsenene at appropriate strains. The nontrivial topological phase was further confirmed by the topological invariant ν = 1 and edge states with a single Dirac-type crossing at the G point. Our results provide a promising strategy for designing 2D TIs with large bulk gaps from commonly used materials.

Graphical abstract: Quantum spin hall insulators in strain-modified arsenene

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Article information

27 Jul 2015
27 Sep 2015
First published
09 Oct 2015

Nanoscale, 2015,7, 19152-19159
Article type

Quantum spin hall insulators in strain-modified arsenene

H. Zhang, Y. Ma and Z. Chen, Nanoscale, 2015, 7, 19152
DOI: 10.1039/C5NR05006E

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