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Issue 29, 2015
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Interaction between lamellar twinning and catalyst dynamics in spontaneous core–shell InGaP nanowires

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Abstract

Semiconductor nanowires oriented along the [211] direction usually present twins parallel to their axis. For group IV nanowires this kind of twin allows the formation of a catalyst–nanowire interface composed of two equivalent {111} facets. For III–V nanowires, however, the twin will generate two facets with different polarities. In order to keep the <211> orientation stable, a balance in growth rates for these different facets must be reached. We report here the observation of stable, micron-long <211>-oriented InGaP nanowires with a spontaneous core–shell structure. We show that stacking fault formation in the crystal region corresponding to the {111}A facet termination provides a stable NW/NP interface for growth along the <211> direction. During sample cool down, however, the catalyst migrates to a lateral {111}B facet, allowing the growth of branches perpendicular to the initial orientation. In addition to that, we show that the core–shell structure is non-concentric, most likely due to the asymmetry between the facets formed in the NW sidewall; this effect generates stress along the nanowire, which can be relieved through bending.

Graphical abstract: Interaction between lamellar twinning and catalyst dynamics in spontaneous core–shell InGaP nanowires

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Supplementary files

Article information


Submitted
28 Apr 2015
Accepted
23 Jun 2015
First published
25 Jun 2015

Nanoscale, 2015,7, 12722-12727
Article type
Paper
Author version available

Interaction between lamellar twinning and catalyst dynamics in spontaneous core–shell InGaP nanowires

D. S. Oliveira, L. H. G. Tizei, A. Li, T. L. Vasconcelos, C. A. Senna, B. S. Archanjo, D. Ugarte and M. A. Cotta, Nanoscale, 2015, 7, 12722
DOI: 10.1039/C5NR02747K

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