Issue 10, 2015

A solution-processed molybdenum oxide treated silver nanowire network: a highly conductive transparent conducting electrode with superior mechanical and hole injection properties

Abstract

We demonstrate the fabrication of solution-processed MoOx-treated (s-MoOx) silver nanowire (AgNW) transparent conductive electrodes (TCEs) utilizing low-temperature (sub-100 °C) processes. The s-MoOx aggregates around the AgNW and forms gauze-like MoOx thin films between the mesh, which can effectively lower the sheet resistance by more than two orders of magnitude. Notably, these s-MoOx-treated AgNW TCEs exhibit a combination of several promising characteristics, such as a high and broad transmittance across a wavelength range of 400 to 1000 nm, transmission of up to 96.8%, a low sheet resistance of 29.8 ohm sq−1, a low haze value of 0.90%, better mechanical properties against bending and adhesion tests, and preferable gap states for efficient hole injection in optoelectronic applications. By utilizing these s-MoOx-treated AgNW TCEs as the anode in ITO-free organic light emitting diodes, promising performance of 29.2 lm W−1 and 10.3% external quantum efficiency are demonstrated. The versatile, multi-functional s-MoOx treatment presented here paves the way for the use of low-temperature, solution-processed MoOx as both a nanowire linker and a hole injection interfacial layer for future flexible optoelectronic devices.

Graphical abstract: A solution-processed molybdenum oxide treated silver nanowire network: a highly conductive transparent conducting electrode with superior mechanical and hole injection properties

Supplementary files

Article information

Article type
Paper
Submitted
18 Nov 2014
Accepted
02 Feb 2015
First published
04 Feb 2015

Nanoscale, 2015,7, 4572-4579

Author version available

A solution-processed molybdenum oxide treated silver nanowire network: a highly conductive transparent conducting electrode with superior mechanical and hole injection properties

J. Chang, K. Chiang, H. Kang, W. Chi, J. Chang, C. Wu and H. Lin, Nanoscale, 2015, 7, 4572 DOI: 10.1039/C4NR06805J

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