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Issue 12, 2015
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Operating principles of in-plane silicon nanowires at simple step-edges

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Abstract

Growing silicon nanowires (SiNWs) into precise locations is a key enabling technology for SiNW-based device applications. This can be achieved via in-plane growth of SiNWs along a simple step-edge, where metal catalyst droplets absorb an amorphous Si matrix to produce c-SiNWs. However, a comprehensive understanding of this phenomenon is still lacking. We here establish an analytical model to address the driving force that dictates the growth dynamics under various droplet-step contact configurations, and to identify the key control parameters for effective guided growth. These new principles were verified against a series of experimental observations and proved to be powerful in designing a stable guided growth configuration. Furthermore, we propose and demonstrate a unique ability to achieve in situ capturing, guiding and release of the in-plane SiNWs along curved step-edges. We suggest that such a new understanding and results provide a fundamental basis and a practical guide for positioning and integrating self-assembled nanowires in a wide variety of material systems.

Graphical abstract: Operating principles of in-plane silicon nanowires at simple step-edges

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Publication details

The article was received on 06 Nov 2014, accepted on 06 Jan 2015 and first published on 08 Jan 2015


Article type: Paper
DOI: 10.1039/C4NR06531J
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Nanoscale, 2015,7, 5197-5202

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    Operating principles of in-plane silicon nanowires at simple step-edges

    M. Xu, Z. Xue, L. Yu, S. Qian, Z. Fan, J. Wang, J. Xu, Y. Shi, K. Chen and P. Roca i Cabarrocas, Nanoscale, 2015, 7, 5197
    DOI: 10.1039/C4NR06531J

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