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Issue 24, 2014
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Detailed formation processes of stable dislocations in graphene

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Abstract

We use time-dependent HRTEM to reveal that stable dislocation pairs in graphene are formed from an initial complex multi-vacancy cluster that undergoes multiple bond rotations and adatom incorporation. In the process, it is found that the transformation from the formed complex multi-vacancy cluster can proceed without the increase of vacancy because many atoms and dimers are not only evaporated but also actively adsorbed. In tight-binding molecular dynamics simulations, it is confirmed that adatoms play an important role in the reconstruction of non-hexagonal rings into hexagonal rings. From density functional theory calculations, it is also found from simulations that there is a favorable distance between two dislocations pointing away from each other (i.e. formed from atom loss). For dislocation pairs pointing away from each other, the hillock–basin structure is more stable than the hillock–hillock structure for dislocation pairs pointing away from each other (i.e. formed from atom loss).

Graphical abstract: Detailed formation processes of stable dislocations in graphene

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Publication details

The article was received on 16 Aug 2014, accepted on 30 Sep 2014 and first published on 02 Oct 2014


Article type: Paper
DOI: 10.1039/C4NR04718D
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Nanoscale, 2014,6, 14836-14844

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    Detailed formation processes of stable dislocations in graphene

    G. Lee, E. Yoon, K. He, A. W. Robertson and J. H. Warner, Nanoscale, 2014, 6, 14836
    DOI: 10.1039/C4NR04718D

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