Phototransistor based on single In2Se3 nanosheets

Qin-Liang Li; Chang-Hai Liu; Yu-Ting Nie; Wen-Hua Chen; Xu Gao; Xu-Hui Sun; Sui-Dong Wang

doi:10.1039/C4NR04404E

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Phototransistor based on single In₂Se₃ nanosheets†

Qin-Liang Li,^a Chang-Hai Liu,^a Yu-Ting Nie,^a Wen-Hua Chen,^a Xu Gao,^a Xu-Hui Sun*^a and Sui-Dong Wang*^a

Author affiliations

* Corresponding authors

^a Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, P. R. China
E-mail: wangsd@suda.edu.cn, xhsun@suda.edu.cn

Abstract

Micrometer-sized single-crystalline In₂Se₃ nanosheets are synthesized by epitaxial growth from In₂Se₃ nanowires. The In₂Se₃ nanosheets possess anisotropic structural configuration with intralayer covalent bonding and interlayer van der Waals bonding. Phototransistors based on the In₂Se₃ nanosheets are realized, and the devices show high photoresponsivity and high photo On/Off ratio up to two orders. The photo-gating effect can be modulated by the gate bias, indicating potential utility of the In₂Se₃ nanosheets in a variety of optoelectronic applications.

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Article information

DOI: https://doi.org/10.1039/C4NR04404E
Article type: Paper
Submitted: 01 Aug 2014
Accepted: 03 Oct 2014
First published: 07 Oct 2014

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Nanoscale, 2014,6, 14538-14542

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Phototransistor based on single In₂Se₃ nanosheets

Q. Li, C. Liu, Y. Nie, W. Chen, X. Gao, X. Sun and S. Wang, Nanoscale, 2014, 6, 14538 DOI: 10.1039/C4NR04404E

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