Phototransistor based on single In2Se3 nanosheets†
Abstract
Micrometer-sized single-crystalline In2Se3 nanosheets are synthesized by epitaxial growth from In2Se3 nanowires. The In2Se3 nanosheets possess anisotropic structural configuration with intralayer covalent bonding and interlayer van der Waals bonding. Phototransistors based on the In2Se3 nanosheets are realized, and the devices show high photoresponsivity and high photo On/Off ratio up to two orders. The photo-gating effect can be modulated by the gate bias, indicating potential utility of the In2Se3 nanosheets in a variety of optoelectronic applications.