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Issue 22, 2014
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Enhanced plasmonic properties of gold-catalysed semiconductor nanowires

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Abstract

A key challenge for the development of plasmonic nanodevices is their integration into active semiconducting structures. Gold-catalysed semiconductor nanowires are promising candidates for their bottom-up growth process that aligns a single gold nanoparticle at each nanowire apex. Unfortunately these show extremely poor plasmonic properties. In this work, we propose a way to enhance their plasmonic resonance up to those of ideal and isolated gold nanoparticles. A suitable purification protocol compatible with GaAs and ZnSe molecular beam epitaxy of nanowires is used to produce plasmonic active nanowires, which were used to enhance the Raman signal of pentacene and graphene oxide. Enhancement factors up to three orders of magnitude are demonstrated.

Graphical abstract: Enhanced plasmonic properties of gold-catalysed semiconductor nanowires

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Article information


Submitted
11 Jul 2014
Accepted
07 Sep 2014
First published
10 Sep 2014

Nanoscale, 2014,6, 13651-13659
Article type
Paper

Enhanced plasmonic properties of gold-catalysed semiconductor nanowires

D. Naumenko, V. Zannier, V. Grillo, D. Cassese, G. Priante, S. dal Zilio, S. Rubini and M. Lazzarino, Nanoscale, 2014, 6, 13651
DOI: 10.1039/C4NR03913K

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