Jump to main content
Jump to site search

Issue 20, 2014
Previous Article Next Article

Three-dimensional hierarchical Te–Si nanostructures

Author affiliations


Three-dimensional hybrid nanostructures (i.e., Te “nanobranches” on a Si “nanotrunk” or Te “nanoleaves” on a Si “nanotrunk”) were synthesized by combining the gold-assisted chemical etching of Si to form Si “nanotrunks” and the galvanic displacement of Si to form Te “nanobranches” or “nanoleaves.” By adjusting the composition of the electrolyte used for the galvanic displacement reaction, the shape of the Te nanostructures could be changed from nanoleaves to nanobranches. The Si nanotrunks with Te nanobranches showed stronger luminescent emission in the visible region, with their Raman spectrum having a higher wave number, owing to their grain size being larger. This suggested that the optical and photoelectrochemical properties of Te–Si hybrid nanostructures depend on their shape and size. Using this approach, it should be possible to fabricate various hierarchical nanostructures for use in photoelectronic and photoelectrochemical devices.

Graphical abstract: Three-dimensional hierarchical Te–Si nanostructures

Back to tab navigation

Supplementary files

Publication details

The article was received on 07 May 2014, accepted on 10 Jun 2014 and first published on 20 Jun 2014

Article type: Paper
DOI: 10.1039/C4NR02469A
Author version
Download author version (PDF)
Nanoscale, 2014,6, 11697-11702

  •   Request permissions

    Three-dimensional hierarchical Te–Si nanostructures

    J. Lim, G. Shin, T. Hwang, H. Lim, Y. Lee, K. Lee, S. Kim, M. Oh, S. Park, N. V. Myung and Y. Choa, Nanoscale, 2014, 6, 11697
    DOI: 10.1039/C4NR02469A

Search articles by author