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Issue 15, 2014
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Facile graphene n-doping by wet chemical treatment for electronic applications

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Abstract

We report a post-synthetic n-doping method for chemical-vapor-deposition (CVD) grown graphene using wet chemical processing. An ammonium fluoride solution was found effective in converting pristine hole doping into electron doping in addition to the mobility improvement of charge carriers. We verified the doping by electrical measurements, Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) analyses and suggest that the mechanism of n-doping is electrostatic doping by ionic physisorption of ammonium ions on the graphene surface. This simple chemical doping method provides a facile and robust route to n-doping of large area graphene for the realization of high performance graphene-based electronic devices.

Graphical abstract: Facile graphene n-doping by wet chemical treatment for electronic applications

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Publication details

The article was received on 03 Mar 2014, accepted on 23 May 2014 and first published on 26 May 2014


Article type: Communication
DOI: 10.1039/C4NR01160K
Citation: Nanoscale, 2014,6, 8503-8508

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    Facile graphene n-doping by wet chemical treatment for electronic applications

    J. H. Bong, O. Sul, A. Yoon, S. Choi and B. J. Cho, Nanoscale, 2014, 6, 8503
    DOI: 10.1039/C4NR01160K

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