Multi-level control of conductive nano-filament evolution in HfO2 ReRAM by pulse-train operations

L. Zhao; H.-Y. Chen; S.-C. Wu; Z. Jiang; S. Yu; T.-H. Hou; H.-S. Philip Wong; Y. Nishi

doi:10.1039/C4NR00500G

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Multi-level control of conductive nano-filament evolution in HfO₂ ReRAM by pulse-train operations†

L. Zhao,^a H.-Y. Chen,^a S.-C. Wu,^b Z. Jiang,^a S. Yu,^c T.-H. Hou,^b H.-S. Philip Wong^a and Y. Nishi*^a

Author affiliations

* Corresponding authors

^a Department of Electrical Engineering, Stanford University, 420 Via Palou, Stanford, CA 94305-4070, USA
E-mail: nishiy@stanford.edu

^b Department of Electronics Engineering, National Chiao Tung University, ED-309C, 1001 University Road, Hsinchu 300, Taiwan

^c Department of Computer Engineering, Arizona State University, P.O. Box 878809, Tempe, AZ 85287-8809, USA

Abstract

Precise electrical manipulation of nanoscale defects such as vacancy nano-filaments is highly desired for the multi-level control of ReRAM. In this paper we present a systematic investigation on the pulse-train operation scheme for reliable multi-level control of conductive filament evolution. By applying the pulse-train scheme to a 3 bit per cell HfO₂ ReRAM, the relative standard deviations of resistance levels are improved up to 80% compared to the single-pulse scheme. The observed exponential relationship between the saturated resistance and the pulse amplitude provides evidence for the gap-formation model of the filament-rupture process.

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Article information

DOI: https://doi.org/10.1039/C4NR00500G
Article type: Communication
Submitted: 24 Jan 2014
Accepted: 16 Mar 2014
First published: 26 Mar 2014
This article is Open Access

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Nanoscale, 2014,6, 5698-5702

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Multi-level control of conductive nano-filament evolution in HfO₂ ReRAM by pulse-train operations

L. Zhao, H.-Y. Chen, S.-C. Wu, Z. Jiang, S. Yu, T.-H. Hou, H.-S. P. Wong and Y. Nishi, Nanoscale, 2014, 6, 5698 DOI: 10.1039/C4NR00500G

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