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Issue 7, 2014
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Designer Ge/Si composite quantum dots with enhanced thermoelectric properties

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Abstract

An otherwise random, self-assembly of Ge/Si composite quantum dots (CQDs) on Si was controlled by inserting a layer of Si, sub-dot stacks, and post-annealing to produce micron-scale-thick QD layers with desired QD morphology, interface density, and composition distribution. A heterostructure consisting of a deliberate insertion of Si between Ge sub-dots is shown to improve the epitaxial coherence of the Ge QDs by suppression of the Ge surface interdiffusion and coarsening. As compared to regular-QD materials, the thin-film-like multifold-CQD materials are found to exhibit both reduced cross-plane thermal conductivity and enhanced electrical conductivity, and 1.5 times higher ZT value by calculation, providing a promising building block for practical thermoelectric applications in micro- or nanoelectronics.

Graphical abstract: Designer Ge/Si composite quantum dots with enhanced thermoelectric properties

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Publication details

The article was received on 28 Nov 2013, accepted on 04 Jan 2014 and first published on 10 Jan 2014


Article type: Paper
DOI: 10.1039/C3NR06335F
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Nanoscale, 2014,6, 3593-3598

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    Designer Ge/Si composite quantum dots with enhanced thermoelectric properties

    H. Chang, S. Wang and S. Lee, Nanoscale, 2014, 6, 3593
    DOI: 10.1039/C3NR06335F

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