A mechanical and electrical transistor structure (METS) with a sub-2 nm nanogap for effective voltage scaling

Abstract

A mechanical and electrical transistor structure (METS) is proposed for effective voltage scaling. The sub-2 nm nanogap by atomic layer deposition (ALD) without stiction and the application of a dielectric with high-permittivity allowed the pull-in voltage of sub-2 V, showing the strength of the mechanical actuation that is hard to realize in a typical complementary metal–oxide–semiconductor (CMOS) transistor. The results are verified by simulation and interpreted by the numerical equation. Therefore the METS can pave a new way to make a breakthrough to overcome the limits of CMOS technology.