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Issue 6, 2014
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Self-assembly of single “square” quantum rings in gold-free GaAs nanowires

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Single nanostructures embedded within nanowires (NWs) represent one of the most promising technologies for applications in quantum photonics. However, fabrication imperfections and etching-induced defects are inevitable for top-down fabrications, whereas self-assembly bottom-up approaches cannot avoid the difficulties of its stochastic nature and are limited to restricted heterogeneous material systems. Here we demonstrate the versatile self-assembly of single “square” quantum rings (QR) on the sidewalls of gold-free GaAs NWs for the first time. By tuning the deposition temperature, As overpressure and amount of gallium-droplets, we were able to control the density and morphology of the structure, yielding novel single quantum dots, QR, coupled QRs, and nano-antidots. A proposed model based on a strain-driven, transport-dependent nucleation of gallium droplets at high temperature accounts for the formation mechanism of these structures. We achieved a single-QR-in-NW structure, of which the optical properties were analyzed using micro-photoluminescence at 10 K and a spatially resolved cathodoluminescence technique at 77 K. The spectra show sharp discrete peaks; of these peaks, the narrowest linewidth (separation) was 578 μeV (1–3 meV), reflecting the quantized nature of the ring-type electronic states.

Graphical abstract: Self-assembly of single “square” quantum rings in gold-free GaAs nanowires

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Article information

22 Oct 2013
07 Dec 2013
First published
12 Dec 2013

Nanoscale, 2014,6, 3190-3196
Article type

Self-assembly of single “square” quantum rings in gold-free GaAs nanowires

G. Zha, X. Shang, D. Su, Y. Yu, B. Wei, L. Wang, M. Li, L. Wang, J. Xu, H. Ni, Y. Ji, B. Sun and Z. Niu, Nanoscale, 2014, 6, 3190
DOI: 10.1039/C3NR05634A

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