Issue 4, 2014

A low temperature process for phosphorous doped ZnO nanorods via a combination of hydrothermal and spin-on dopant methods

Abstract

We demonstrate the fabrication of solution based low temperature-processed p-type ZnO NRs doped with phosphorous by using a spin-on-dopant method coupled with a hydrothermal process. We confirmed the incorporation of phosphorous dopants into a ZnO crystal by analyzing SIMS profiles, together with the evolution of the photoluminescence spectra. It is further revealed that the electrical properties of the p-type ZnO/n-type Si heterojunction diode exhibited good rectifying behavior, confirming that p-type ZnO NRs were successfully formed. In addition, we demonstrate that a piezoelectric nanogenerator with p-type ZnO NRs made on a glass substrate shows large enough power to drive polymer dispersed liquid crystal displays.

Graphical abstract: A low temperature process for phosphorous doped ZnO nanorods via a combination of hydrothermal and spin-on dopant methods

Article information

Article type
Communication
Submitted
25 Sep 2013
Accepted
29 Nov 2013
First published
24 Dec 2013

Nanoscale, 2014,6, 2046-2051

A low temperature process for phosphorous doped ZnO nanorods via a combination of hydrothermal and spin-on dopant methods

J. I. Sohn, Y. Jung, S. Baek, S. Cha, J. E. Jang, C. Cho, J. H. Kim, J. M. Kim and I. Park, Nanoscale, 2014, 6, 2046 DOI: 10.1039/C3NR05128E

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