Issue 5, 2013

Self-assembled dual in-plane gate thin-film transistors gated by nanogranular SiO2proton conductors for logic applications

Abstract

Phosphorus (P)-doped nanogranular SiO2 films are deposited by plasma-enhanced chemical vapor deposition at room temperature, and a high proton conductivity of ∼5.6 × 10−4 S cm−1 is measured at room temperature with a relative humidity of 70%. The accumulation of protons at the SiO2/indium-zinc-oxide (IZO) interface induces a large electric-double-layer (EDL) capacitance. Thin-film transistors (TFTs) with two in-plane gates are self-assembled on transparent conducting glass substrates. The large EDL capacitance can effectively modulate the IZO channel with a current ON/OFF ratio of >107. Such TFTs calculate dual input signals at the gate level coupled with a floating gate, analogous to that of neuron MOS (vMOS). AND logic is demonstrated on the neuron TFTs. Such neuron TFTs gated by P-doped nanogranular SiO2 shows an effective electrostatic modulation on conductivities of oxide semiconductors, which is meaningful for portable chemical-biological sensing applications.

Graphical abstract: Self-assembled dual in-plane gate thin-film transistors gated by nanogranular SiO2 proton conductors for logic applications

Article information

Article type
Paper
Submitted
20 Nov 2012
Accepted
03 Jan 2013
First published
30 Jan 2013

Nanoscale, 2013,5, 1980-1985

Self-assembled dual in-plane gate thin-film transistors gated by nanogranular SiO2 proton conductors for logic applications

L. Q. Zhu, J. Sun, G. D. Wu, H. L. Zhang and Q. Wan, Nanoscale, 2013, 5, 1980 DOI: 10.1039/C3NR33734K

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