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Issue 20, 2013
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Nanoscale quantification of charge injection and transportation process in Si-nanocrystal based sandwiched structure

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Abstract

Si nanocrystals are formed by using KrF pulsed laser crystallization of an amorphous SiC/ultrathin amorphous Si/amorphous SiC sandwiched structure. Electrons and holes are injected into Si nanocrystals via a biased conductive AFM tip and the carrier decay and transportation behaviours at the nanoscale are studied by joint characterization techniques of Kelvin probe force microscopy (KPFM) and conductive atomic force microscopy (CAFM). Quantification of the surface charge density is realized by solving the Poisson equation based on KPFM measurements. Besides, the asymmetric barrier height for electrons and holes is considered to play a dominant role in controlling the charge retention and transportation characteristics. The methodology developed in this work is promising for studying the charge injection and transportation process in other materials and structures at the nanoscale.

Graphical abstract: Nanoscale quantification of charge injection and transportation process in Si-nanocrystal based sandwiched structure

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Publication details

The article was received on 27 Jun 2013, accepted on 07 Aug 2013 and first published on 08 Aug 2013


Article type: Paper
DOI: 10.1039/C3NR03306F
Nanoscale, 2013,5, 9971-9977

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    Nanoscale quantification of charge injection and transportation process in Si-nanocrystal based sandwiched structure

    J. Xu, J. Xu, P. Zhang, W. Li and K. Chen, Nanoscale, 2013, 5, 9971
    DOI: 10.1039/C3NR03306F

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