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Issue 20, 2013
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Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates

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Abstract

We present the temperature-dependent carrier mobility of atomically thin MoS2 field-effect transistors on crystalline hexagonal boron nitride (h-BN) and SiO2 substrates. Our results reveal distinct weak temperature dependence of the MoS2 devices on h-BN substrates. The room temperature mobility enhancement and reduced interface trap density of the single and bilayer MoS2 devices on h-BN substrates further indicate that reducing substrate traps is crucial for enhancing the mobility in atomically thin MoS2 devices.

Graphical abstract: Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates

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Publication details

The article was received on 23 Jun 2013, accepted on 04 Aug 2013 and first published on 08 Aug 2013


Article type: Communication
DOI: 10.1039/C3NR03220E
Citation: Nanoscale, 2013,5, 9572-9576

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    Suppression of thermally activated carrier transport in atomically thin MoS2 on crystalline hexagonal boron nitride substrates

    M. Y. Chan, K. Komatsu, S. Li, Y. Xu, P. Darmawan, H. Kuramochi, S. Nakaharai, A. Aparecido-Ferreira, K. Watanabe, T. Taniguchi and K. Tsukagoshi, Nanoscale, 2013, 5, 9572
    DOI: 10.1039/C3NR03220E

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