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Issue 19, 2013

Sensing extremely limited H2 contents by Pd nanogap connected to an amorphous InGaZnO thin-film transistor

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Abstract

A palladium (Pd) nanogap-based thin-film has been connected to an electrically stable amorphous InGaZnO thin-film transistor, to form a hydrogen sensor demonstrating a dramatic sensing capability. As a result of the Pd connection to the transistor source, our sensor circuit greatly enhances the hydrogen-induced signal and sensing speed in the sense of output voltage, clearly resolving a minimum hydrogen content of 0.05%. When the nanogap-based Pd thin-film was connected to the transistor gate, an extremely limited hydrogen content of even less than 0.05% was visibly detected through gate voltage shifts. Our results exhibit the most promising and practical ways to sense extremely limited hydrogen contents, originating from two methods: transistor-to-Pd nanogap resistor and transistor-to-Pd nanogap capacitor coupling.

Graphical abstract: Sensing extremely limited H2 contents by Pd nanogap connected to an amorphous InGaZnO thin-film transistor

Supplementary files

Article information


Submitted
13 Apr 2013
Accepted
15 Jul 2013
First published
16 Jul 2013

Nanoscale, 2013,5, 8915-8920
Article type
Communication

Sensing extremely limited H2 contents by Pd nanogap connected to an amorphous InGaZnO thin-film transistor

Y. T. Lee, H. Jung, S. H. Nam, P. J. Jeon, J. S. Kim, B. Jang, W. Lee and S. Im, Nanoscale, 2013, 5, 8915 DOI: 10.1039/C3NR01847D

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