Jump to main content
Jump to site search

Issue 15, 2013
Previous Article Next Article

Anomalous quantum efficiency for photoconduction and its power dependence in metal oxide semiconductor nanowires

Author affiliations

Abstract

The quantum efficiency and carrier lifetime that decide the photoconduction (PC) efficiencies in the metal oxide semiconductor nanowires (NWs) have been investigated. The experimental result surprisingly shows that the SnO2, TiO2, WO3, and ZnO NWs reveal extraordinary quantum efficiencies in common, which are over one to three orders of magnitude lower than the theoretical expectation. The surface depletion region (SDR)-controlled photoconductivity is proposed to explain the anomalous quantum efficiency and its power dependence. The inherent difference between the metal oxide nanostructures such as carrier lifetime, carrier concentration, and dielectric constant leading to the distinct PC performance and behavior are also discussed.

Graphical abstract: Anomalous quantum efficiency for photoconduction and its power dependence in metal oxide semiconductor nanowires

Back to tab navigation

Supplementary files

Article information


Submitted
02 Apr 2013
Accepted
06 May 2013
First published
13 May 2013

Nanoscale, 2013,5, 6867-6873
Article type
Paper

Anomalous quantum efficiency for photoconduction and its power dependence in metal oxide semiconductor nanowires

R. S. Chen, W. C. Wang, M. L. Lu, Y. F. Chen, H. C. Lin, K. H. Chen and L. C. Chen, Nanoscale, 2013, 5, 6867
DOI: 10.1039/C3NR01635H

Social activity

Search articles by author

Spotlight

Advertisements