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Issue 15, 2013
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Anomalous quantum efficiency for photoconduction and its power dependence in metal oxide semiconductor nanowires†

R. S. Chen,*a   W. C. Wang,b   M. L. Lu,c   Y. F. Chen,c   H. C. Lin,d   K. H. Chende  and  L. C. Chene  
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* Corresponding authors

a Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, 43, Sec. 4, Keelung Rd., Taipei 10607, Taiwan
E-mail: rsc@mail.ntust.edu.tw
Fax: +886-2-2730-3733
Tel: +886-2-2730-3754

b Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei 10607, Taiwan

c Department of Physics, National Taiwan University, Taipei 10617, Taiwan

d Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan

e Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan

Abstract

The quantum efficiency and carrier lifetime that decide the photoconduction (PC) efficiencies in the metal oxide semiconductor nanowires (NWs) have been investigated. The experimental result surprisingly shows that the SnO2, TiO2, WO3, and ZnO NWs reveal extraordinary quantum efficiencies in common, which are over one to three orders of magnitude lower than the theoretical expectation. The surface depletion region (SDR)-controlled photoconductivity is proposed to explain the anomalous quantum efficiency and its power dependence. The inherent difference between the metal oxide nanostructures such as carrier lifetime, carrier concentration, and dielectric constant leading to the distinct PC performance and behavior are also discussed.

Graphical abstract: Anomalous quantum efficiency for photoconduction and its power dependence in metal oxide semiconductor nanowires

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Article information

https://doi.org/10.1039/C3NR01635H
Submitted
02 Apr 2013
Accepted
06 May 2013
First published
13 May 2013
Nanoscale, 2013,5, 6867-6873
Article type
Paper
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Anomalous quantum efficiency for photoconduction and its power dependence in metal oxide semiconductor nanowires

R. S. Chen, W. C. Wang, M. L. Lu, Y. F. Chen, H. C. Lin, K. H. Chen and L. C. Chen, Nanoscale, 2013, 5, 6867
DOI: 10.1039/C3NR01635H

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