Issue 3, 2013

Modification of electronic properties of top-gated graphene devices by ultrathin yttrium-oxide dielectric layers

Abstract

We report the structure characterization and electronic property modification of single layer graphene (SLG) field-effect transistor (FET) devices top-gated using ultrathin Y2O3 as dielectric layers. Based on the Boltzmann transport theory within variant screening, Coulomb scattering is confirmed quantitatively to be dominant in Y2O3-covered SLG and a very few short-range impurities have been introduced by Y2O3. Both DC transport and AC capacitance measurements carried out at cryogenic temperatures demonstrate that the broadening of Landau levels is mainly due to the additional charged impurities and inhomogeneity of carriers induced by Y2O3 layers.

Graphical abstract: Modification of electronic properties of top-gated graphene devices by ultrathin yttrium-oxide dielectric layers

Article information

Article type
Paper
Submitted
01 Nov 2012
Accepted
28 Nov 2012
First published
04 Dec 2012

Nanoscale, 2013,5, 1116-1120

Modification of electronic properties of top-gated graphene devices by ultrathin yttrium-oxide dielectric layers

L. Wang, X. Chen, Y. Wang, Z. Wu, W. Li, Y. Han, M. Zhang, Y. He, C. Zhu, K. K. Fung and N. Wang, Nanoscale, 2013, 5, 1116 DOI: 10.1039/C2NR33434H

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