Issue 24, 2012
From the journal:

Nanoscale

Photoluminescence of silicon quantum dots in nanospheres†

Yuxiao Zhang,‡a   Xiao Han,‡a   Jianming Zhang,a   Yang Liu,*a   Hui Huang,a   Hai Ming,a   Shuit-Tong Leea  and  Zhenhui Kang*a  

* Corresponding authors

a Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, China
E-mail: yangl@suda.edu.cn, zhkang@suda.edu.cn

Abstract

Si quantum dots (SiQDs) based nanospheres (SiNSs) were prepared via a novel synthetic strategy. These SiNSs were demonstrated to possess unique dot spacing dependent photoluminescence (PL) up-conversion and surface dependent (N modified surface) down-converted PL. It was demonstrated that a small distance between SiQDs (<5 nm) is the necessary condition for the PL up-conversion of SiNSs, while the surface state of SiQDs will affect the maximum emission wavelength and the PL intensity. The as-prepared SiNSs feature excellent aqueous dispersibility, and their optical properties were found to be stable enough in a specified temperature and pH range.

Graphical abstract: Photoluminescence of silicon quantum dots in nanospheres

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Article information

DOI
https://doi.org/10.1039/C2NR32375C
Article type
Paper
Submitted
02 Jul 2012
Accepted
07 Oct 2012
First published
11 Oct 2012

Nanoscale, 2012,4, 7760-7765

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Photoluminescence of silicon quantum dots in nanospheres

Y. Zhang, X. Han, J. Zhang, Y. Liu, H. Huang, H. Ming, S. Lee and Z. Kang, Nanoscale, 2012, 4, 7760 DOI: 10.1039/C2NR32375C

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