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Issue 24, 2012
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Photoluminescence of silicon quantum dots in nanospheres

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Abstract

Si quantum dots (SiQDs) based nanospheres (SiNSs) were prepared via a novel synthetic strategy. These SiNSs were demonstrated to possess unique dot spacing dependent photoluminescence (PL) up-conversion and surface dependent (N modified surface) down-converted PL. It was demonstrated that a small distance between SiQDs (<5 nm) is the necessary condition for the PL up-conversion of SiNSs, while the surface state of SiQDs will affect the maximum emission wavelength and the PL intensity. The as-prepared SiNSs feature excellent aqueous dispersibility, and their optical properties were found to be stable enough in a specified temperature and pH range.

Graphical abstract: Photoluminescence of silicon quantum dots in nanospheres

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Supplementary files

Article information


Submitted
02 Jul 2012
Accepted
07 Oct 2012
First published
11 Oct 2012

Nanoscale, 2012,4, 7760-7765
Article type
Paper

Photoluminescence of silicon quantum dots in nanospheres

Y. Zhang, X. Han, J. Zhang, Y. Liu, H. Huang, H. Ming, S. Lee and Z. Kang, Nanoscale, 2012, 4, 7760
DOI: 10.1039/C2NR32375C

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