Vertical etching with isolated catalysts in metal-assisted chemical etching of silicon†
Abstract
Metal assisted chemical
Maintenance work is planned from 09:00 BST to 12:00 BST on Saturday 28th September 2024.
During this time the performance of our website may be affected - searches may run slowly, some pages may be temporarily unavailable, and you may be unable to access content. If this happens, please try refreshing your web browser or try waiting two to three minutes before trying again.
We apologise for any inconvenience this might cause and thank you for your patience.
* Corresponding authors
a
Advanced Materials for Micro- and Nano-Systems Programme, Singapore-MIT Alliance, Singapore 117576, Singapore
E-mail:
elechoi@nus.edu.sg
Fax: +65-6779-1103
Tel: +65-6516-6473
b Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
c NUS Graduate School for Integrative Sciences and Engineering, National University of Singapore, Singapore 117456, Singapore
d Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
Metal assisted chemical
P. Lianto, S. Yu, J. Wu, C. V. Thompson and W. K. Choi, Nanoscale, 2012, 4, 7532 DOI: 10.1039/C2NR32350H
To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.
If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.
If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.
Read more about how to correctly acknowledge RSC content.
Fetching data from CrossRef.
This may take some time to load.
Loading related content