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Issue 19, 2012
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Porosification-reduced optical trapping of silicon nanostructures

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Abstract

Metal-assisted chemical etching (MACE) was carried out to fabricate solid silicon nanowires (s-SiNWs) and mesoporous silicon nanowires (mp-SiNWs). Total reflection and transmission were measured using an integrated sphere to study optical properties of the MACE-generated silicon nanostructures. Without NW aggregation, mp-SiNWs vertically standing on a mesoporous silicon layer trap less light than s-SiNWs over a wavelength range of 400–800 nm, owing to porosification-enhanced optical scattering from the rough inner surfaces of the mesoporous silicon skeletons. Porosification substantially weakens the NW mechanical strength; hence the elongated mp-SiNWs aggregate after 30 min etching and deteriorate optical trapping.

Graphical abstract: Porosification-reduced optical trapping of silicon nanostructures

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Article information


Submitted
01 Jul 2012
Accepted
01 Aug 2012
First published
03 Aug 2012

Nanoscale, 2012,4, 5835-5839
Article type
Communication

Porosification-reduced optical trapping of silicon nanostructures

W. To, J. Fu, X. Yang, V. A. L. Roy and Z. Huang, Nanoscale, 2012, 4, 5835
DOI: 10.1039/C2NR31680C

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