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Issue 20, 2012
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Improving the characteristics of an organic nano floating gate memory by a self-assembled monolayer

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Abstract

We demonstrate a novel approach to improve the characteristics of the gold nanoparticle-based organic transistor memory devices by using self-assembled monolayers (SAM) with different functional groups as interfacial modifier. SAM-based interfacial engineering significantly improved the hysteresis, memory window, and on/off ratio of a nano floating gate memory (NFGM) at zero gate voltage. This NFGM showed a large memory window of up to 190 V and on/off current ratio of 105 during writing and erasing with an operation voltage of 100 V of gate bias in a short time, less than 1 s. Furthermore, the devices show excellent nonvolatile behavior for bistable switching. The ON and OFF state can be stably maintained for 103 s with an Ion/Ioff current ratio of 106 for a pentafluorophenyl trimethoxysilane modified device. The results suggested the importance of SAM-modified interface for the memory performance of NFGMs.

Graphical abstract: Improving the characteristics of an organic nano floating gate memory by a self-assembled monolayer

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Publication details

The article was received on 13 Apr 2012, accepted on 15 Aug 2012 and first published on 21 Aug 2012


Article type: Paper
DOI: 10.1039/C2NR30882G
Citation: Nanoscale, 2012,4, 6629-6636

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    Improving the characteristics of an organic nano floating gate memory by a self-assembled monolayer

    H. Chang, W. Lee, Y. Tai, K. Wu and W. Chen, Nanoscale, 2012, 4, 6629
    DOI: 10.1039/C2NR30882G

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