Photoconductive and supramolecularly engineered organic field-effect transistors based on fibres from donor–acceptor dyads

Abstract

We report on the formation of photoconductive self-assembled fibres by solvent induced precipitation of a HBC–PMI donor–acceptor dyad. Kelvin Probe Force Microscopy revealed that upon illumination with white light the surface potential of the fibres shifted to negative values due to a build-up of negative charge. When integrated in a field-effect transistor (FET) configuration, the devices can be turned ‘on’ much more efficiently using light than conventional bias triggered field-effect, suggesting that these structures could be used for the fabrication of light sensing devices. Such a double gating represents an important step towards bi-functional organic FETs, in which the current through the junction can be modulated both optically (by photoexcitation) and electrically (by gate control).